| PART |
Description |
Maker |
| IRF7311PBF IRF7311PBF-15 |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRF7403 IRF7403TRPBF |
Generation V Technology
Power MOSFET
|
IRF[International Rectifier]
|
| SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
| IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
